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| Categories | Bridge Rectifiers |
|---|---|
| Non-Repetitive Peak Forward Surge Current: | 50A |
| Operating Junction Temperature Range: | -55℃~+150℃ |
| Voltage - Forward(Vf@If): | 1.1V@1A |
| Current - Rectified: | 1A |
| Voltage - DC Reverse(Vr): | 100V |
| Description: | Bridge Rectifier 100V 1A Surface Mount DF-S |
| Mfr. Part #: | DF01S-E3/77 |
| Model Number: | DF01S-E3/77 |
| Package: | DF-S |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The Vishay General Semiconductor DF005S to DF10S series are miniature, glass-passivated, single-phase surface-mount bridge rectifiers. These rectifiers are designed for general-purpose AC/DC full-wave rectification in various applications including SMPS, lighting ballasts, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. They feature high surge current capability, UL recognition, and meet MSL level 1 standards, making them ideal for automated placement.
| Parameter | Symbol | DF005S | DF01S | DF02S | DF04S | DF06S | DF08S | DF10S | Unit |
| Device marking code | DF005S | DF01S | DF02S | DF04S | DF06S | DF08S | DF10S | ||
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward output rectified current at TA = 40 C | IF(AV) | 1.0 | A | ||||||
| Peak forward surge current single half sine-wave superimposed on rated load | IFSM | 50 | A | ||||||
| Rating for fusing (t < 8.3 ms) | I2t | 10 | A2s | ||||||
| Operating junction and storage temperature range | TJ, TSTG | -55 to +150 | C | ||||||
| Maximum instantaneous forward voltage drop per diode at IF = 1.0 A | VF | 1.1 | V | ||||||
| Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 C | IR | 5.0 | A | ||||||
| Maximum DC reverse current at rated DC blocking voltage per diode TA = 125 C | IR | 500 | A | ||||||
| Typical junction capacitance per diode (f = 1.0 MHz, VR = 4.0 V) | CJ | 25 | pF | ||||||
| Typical thermal resistance (1) (Mounted on PCB with 0.51" x 0.51" copper pads) | RJA | 40 | C/W | ||||||
| Typical thermal resistance (1) (Mounted on PCB with 0.51" x 0.51" copper pads) | RJL | 15 | C/W | ||||||
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