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| Categories | Tip Power Transistors |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | Hua Xuan Yang |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | 2N3906 |
| product name: | semiconductor triode type |
| Application: | mobile power supply/ led driver/motor control |
| Material: | Silicon |
| Emitter-Base Voltage: | 6V |
| Case: | Tape/Tray/Reel |
SOT-89-3L Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (NPN).
Ÿ PNP silicon epitaxial planar transistor for switching and Amplifier applications
Ÿ As complementary type, the NPN transistor 2N3904 is Recommended
Ÿ This transistor is also available in the SOT-23 case with the type designation MMBT3906
MAXIMUM RATINGS(Ta=25ć unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -40 | V |
| VCEO | Collector-Emitter Voltage | -40 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current-Continuous | -0.2 | A |
| PC | Collector Power Dissipation | 0.625 | W |
| TJ | Junction Temperature | 150 | ć |
| Tstg | Storage Temperature | -55~150 | ć |
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC = -10µA, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1mA , IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= -10µA, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB= -40 V,IE=0 | -0.1 | µA | ||
| Collector cut-off current | ICEX | VCE= -30 V,VEB(off)=-3V | -50 | nA | ||
| Emitter cut-off current | IEBO | VEB= -5 V , IC=0 | -0.1 | µA | ||
DC current gain | hFE1 | VCE=-1 V, IC= -10mA | 100 | 400 | ||
| hFE2 | VCE=-1 V, IC= -50mA | 60 | ||||
| hFE3 | VCE=-2 V, IC= -100mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC= -50mA, IB= -5mA | -0.4 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC= -50mA, IB= -5mA | -0.95 | V | ||
| Transition frequency | fT | VCE=-20V, IC= -10mA f = 100MHz | 250 | MHz | ||
| Delay Time | td | VCC=-3V,VBE=-0.5V, IC=-10mA,IB1=-1mA | 35 | ns | ||
| Rise Time | tr | 35 | ns | |||
| Storage Time | ts | VCC=-3V,Ic=-10mA IB1=IB2=-1mA | 225 | ns | ||
| Fall Time | tf | 75 | ns |
Typical Characteristics
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 3.300 | 3.700 | 0.130 | 0.146 |
| A1 | 1.100 | 1.400 | 0.043 | 0.055 |
| b | 0.380 | 0.550 | 0.015 | 0.022 |
| c | 0.360 | 0.510 | 0.014 | 0.020 |
| D | 4.300 | 4.700 | 0.169 | 0.185 |
| D1 | 3.430 | 0.135 | ||
| E | 4.300 | 4.700 | 0.169 | 0.185 |
| e | 1.270 TYP | 0.050 TYP | ||
| e1 | 2.440 | 2.640 | 0.096 | 0.104 |
| L | 14.100 | 14.500 | 0.555 | 0.571 |
| 0 | 1.600 | 0.063 | ||
| h | 0.000 | 0.380 | 0.000 | 0.015 |
SOT-89-3L Suggested Pad Layout
TO-92 Suggested Pad Layout
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