N-GaAs Substrate 6inch 350um Thickness For VCSEL Use OptiWave VCSEL EpiWafer
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N-GaAs substrate 6inch 350um thickness for VCSEL use OptiWave VCSEL epiWafer VCSEL epiWafer N-GaAs substrate' s abstract The VCSEL epiWafer on N-GaAs substrate is designed for high-performance optical applications, particularly for Gigabit Ethernet and ......
SHANGHAI FAMOUS TRADE CO.,LTD
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6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates
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... wafer GaAs Wafers GaAs Substrate Wafers GaAS substrate wafers GaAS is a semiconductor material with superior properties of high frequency, high electron migration, high electron performance, low salivary sound and ......
SHANGHAI FAMOUS TRADE CO.,LTD
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Semi - Insulating , GaAs Substrate , 2”, Mechanical Grade
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... technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs substrate......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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350um Fused Silica Wafer Quartz Borosilicate Glass Carrier Wafers
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Fused Silica Quartz Borosilicate Glass Wafer As Carrier Wafers Due to their low thickness, thin wafers are vulnerable to stress and breakage. Warping of the wafers during handling and processing causes a high yield loss or can even make it impossible to ......
Hangzhou Freqcontrol Electronic Technology Ltd.
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KPHB-1608CGKSYKC-GX Single Color LEDs Light emitting Diode LED Power LEDs
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... Color LEDs DESCRIPTIONS ●The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode ●The Super Bright Yellow device is made with AIGalnP (on GaAs substrate) light emitting diode chip ●Electrostatic discharge and...
Wisdtech Technology Co.,Limited
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Red Single Digit Common Anode 7 Segment Display 0.39 Inch 35pF Capacitance
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10mm (0.39 inch) Red Single Digit Common Anode 7 Segment Display Description: • The hyper red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode • Electrostatic discharge and power surge could damage the LEDs • It is ......
Ningbo Anyo Import & Export Co., Ltd.
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Round Sapphire Optical Lenses , 2.0mm Ar Coated Sapphire Windows
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...Watch Case/ Watch Lens Description Sapphire window products can be used as Gan, GaAs and other new materials, integrated circuit substrates, epitaxial and directional substrates, watch glass lens, optical lenses and surface acoustic wave devices; Because ......
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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Through Hole Multi-Color LED, 5MM, RED/GREEN/BLUE, 0.2/1.3/0.3CD
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...:Each or Custom Viewing Angle:60° The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. The Blue source color devices are made with InGaN Light Emitting Diode. The Green source color devices are made with ......
ETERNITY SPLENDENT TECHNOLOGY CO.,LTD.
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APHBM2012SURKCGKC Kingbright SMD0805 Surface Mount Led Lamp Hyper
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... AND INDICATOR. z MOISTURE SENSITIVITY LEVEL : LEVEL 3. z RoHS COMPLIANT. Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. The Green source...
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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