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GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED , LD And Microelectronics

Categories GaAs Wafer
Brand Name: PAM-XIAMEN
Place of Origin: China
MOQ: 1-10,000pcs
Payment Terms: T/T
Delivery Time: 5-50 working days
Price: By Case
name: GaAs wafer
application: LD and Microelectronics
size: 2-6 inch
type: Gallium Arsenide Wafer
Dopant: Silicon
Thickness: 220~450um
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    GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED , LD And Microelectronics

    GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED ,LD And Microelectronics

    Product Description

    (GaAs) Gallium Arsenide Wafers

    PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

    (GaAs)Gallium Arsenide Wafers for LED Applications


    ItemSpecificationsRemarks
    Conduction TypeSC/n-typeSC/p-type with Zn dope Available
    Growth MethodVGF
    DopantSiliconZn available
    Wafer Diamter2, 3 & 4 inchIngot or as-cut availalbe
    Crystal Orientation(100)2°/6°/15° off (110)Other misorientation available
    OFEJ or US
    Carrier Concentration(0.4~2.5)E18/cm3
    Resistivity at RT(1.5~9)E-3 Ohm.cm
    Mobility1500~3000cm2/V.sec
    Etch Pit Density<5000/cm2
    Laser Markingupon request
    Surface FinishP/E or P/P
    Thickness220~450um
    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    (GaAs)Gallium Arsenide Wafers for LD Applications

    ItemSpecificationsRemarks
    Conduction TypeSC/n-type
    Growth MethodVGF
    DopantSilicon
    Wafer Diamter2, 3 & 4 inchIngot or as-cut available
    Crystal Orientation(100)2°/6°/15°off (110)Other misorientation available
    OFEJ or US
    Carrier Concentration(0.4~2.5)E18/cm3
    Resistivity at RT(1.5~9)E-3 Ohm.cm
    Mobility1500~3000 cm2/V.sec
    Etch Pit Density<500/cm2
    Laser Markingupon request
    Surface FinishP/E or P/P
    Thickness220~350um
    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    (GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

    ItemSpecificationsRemarks
    Conduction TypeInsulating
    Growth MethodVGF
    DopantUndoped
    Wafer Diamter2, 3 & 4 inchIngot available
    Crystal Orientation(100)+/- 0.5°
    OFEJ, US or notch
    Carrier Concentrationn/a
    Resistivity at RT>1E7 Ohm.cm
    Mobility>5000 cm2/V.sec
    Etch Pit Density<8000 /cm2
    Laser Markingupon request
    Surface FinishP/P
    Thickness350~675um
    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

    ItemSpecificationsRemarks
    Conduction TypeSemi-insulating
    Grow MethodVGF
    DopantUndoped
    TypeN
    Diamater(mm)150±0.25
    Orientation(100)0°±3.0°
    NOTCH Orientation〔010〕±2°
    NOTCH Deepth(mm)(1-1.25)mm 89°-95°
    Carrier ConcentrationN/A
    Resistivity(ohm.cm)>1.0×107 or 0.8-9 x10-3
    Mobility(cm2/v.s)N/A
    DislocationN/A
    Thickness(µm)675±25
    Edge Exclusion for Bow and Warp(mm)N/A
    Bow(µm)N/A
    Warp(µm)≤20.0
    TTV(µm)≤10.0
    TIR(µm)≤10.0
    LFPD(µm)N/A
    PolishingP/P Epi-Ready

    2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

    ItemSpecificationsRemarks
    Diamater(mm)Ф 50.8mm ± 1mm
    Thickness1-2um or 2-3um
    Marco Defect Density≤ 5 cm-2
    Resistivity(300K)>108 Ohm-cm
    Carrier<0.5ps
    Dislocation Density<1x106cm-2
    Useable Surface Area≥80%
    PolishingSingle side polished
    SubstrateGaAs Substrate
    * We also can provide poly crystal GaAs bar, 99.9999%(6N).

    (GaAs) Gallium Arsenide Wafers

    PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

    (GaAs)Gallium Arsenide Wafers for LED Applications


    ItemSpecificationsRemarks
    Conduction TypeSC/n-typeSC/p-type with Zn dope Available
    Growth MethodVGF
    DopantSiliconZn available
    Wafer Diamter2, 3 & 4 inchIngot or as-cut availalbe
    Crystal Orientation(100)2°/6°/15° off (110)Other misorientation available
    OFEJ or US
    Carrier Concentration(0.4~2.5)E18/cm3
    Resistivity at RT(1.5~9)E-3 Ohm.cm
    Mobility1500~3000cm2/V.sec
    Etch Pit Density<5000/cm2
    Laser Markingupon request
    Surface FinishP/E or P/P
    Thickness220~450um
    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    (GaAs)Gallium Arsenide Wafers for LD Applications

    ItemSpecificationsRemarks
    Conduction TypeSC/n-type
    Growth MethodVGF
    DopantSilicon
    Wafer Diamter2, 3 & 4 inchIngot or as-cut available
    Crystal Orientation(100)2°/6°/15° off (110)Other misorientation available
    OFEJ or US
    Carrier Concentration(0.4~2.5)E18/cm3
    Resistivity at RT(1.5~9)E-3 Ohm.cm
    Mobility1500~3000 cm2/V.sec
    Etch Pit Density<500/cm2
    Laser Markingupon request
    Surface FinishP/E or P/P
    Thickness220~350um
    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    (GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

    ItemSpecificationsRemarks
    Conduction TypeInsulating
    Growth MethodVGF
    DopantUndoped
    Wafer Diamter2, 3 & 4 inchIngot available
    Crystal Orientation(100)+/- 0.5°
    OFEJ, US or notch
    Carrier Concentrationn/a
    Resistivity at RT>1E7 Ohm.cm
    Mobility>5000 cm2/V.sec
    Etch Pit Density<8000 /cm2
    Laser Markingupon request
    Surface FinishP/P
    Thickness350~675um
    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

    ItemSpecificationsRemarks
    Conduction TypeSemi-insulating
    Grow MethodVGF
    DopantUndoped
    TypeN
    Diamater(mm)150±0.25
    Orientation(100)0°±3.0°
    NOTCH Orientation〔010〕±2°
    NOTCH Deepth(mm)(1-1.25)mm 89°-95°
    Carrier ConcentrationN/A
    Resistivity(ohm.cm)>1.0×107 or 0.8-9 x10-3
    Mobility(cm2/v.s)N/A
    DislocationN/A
    Thickness(µm)675±25
    Edge Exclusion for Bow and Warp(mm)N/A
    Bow(µm)N/A
    Warp(µm)≤20.0
    TTV(µm)≤10.0
    TIR(µm)≤10.0
    LFPD(µm)N/A
    PolishingP/P Epi-Ready

    2″ (50.8mm)LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

    ItemSpecificationsRemarks
    Diamater(mm)Ф 50.8mm ± 1mm
    Thickness1-2um or 2-3um
    Marco Defect Density≤ 5 cm-2
    Resistivity(300K)>108 Ohm-cm
    Carrier<0.5ps
    Dislocation Density<1x106cm-2
    Useable Surface Area≥80%
    PolishingSingle side polished
    SubstrateGaAs Substrate
    * We also can provide poly crystal GaAs bar, 99.9999%(6N).
    Quality GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED , LD And Microelectronics for sale
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